PIP releases 150V and 600V single-N Depletion-Mode MOSFET(DP series), realizing ultra-low unit Rdson and Controllable turn-off voltage by using new planar process. With mainstream high-density process and solid polysilicon gate cell structure, Rdson, dynamic parameter, UIS and reliability are comprehensively promoted. Suitable for SMPS Starting auxiliary circuit, open switching application, linear amplifier, constant-current source, power converter and input protection circuit etc.
    Depletion mode MOSFET can be used as replacement components of JFET. Compare to JFET, Depletion mode MOSFET has better reliability, easy driving control, low power loss and better temperature characteristics. 
    Now 150V and 600V DP MOS are in mass production. All products meet RoHS standard.

    Features:

      ◆N-channel depletion mode

    ◆Normally On components

    ◆High reliability

    ◆Low Qg

    Application:

    ◆SMPS auxiliary circuit

    ◆Input Protection Circuit

    ◆Constant-current source Circuit

    Products list: